Multi-core/shell SiO₂@Al₂O₃ nanostructures deposited on Ti₃AlC₂ to enhance high-temperature stability and microwave absorption properties

Abstract Poor high-temperature stability (HTS) and weak microwave absorption performance (MAP) are a major restriction for wave-absorbing materials in elevated temperature ambient. Consequently, the Stöber process sol–gel method first devised used to create multi-core/shell SiO 2 @Al O 3 nanostructures (MCSNs) on Ti AlC (TAC). The MCSNs with thickness of 135–215 nm raise starting oxidation matrix by 400°C. Furthermore, weight gain drops from 17.44 2.32% within 1 h at 800°C. effective bandwidth reflection loss (RL) ≤ −10 dB MCSNs-coated TAC is 3.25 GHz (8.68–11.27 11.63–12.29 GHz) 2.0 mm, which 4.7 times that matrix. minimum RL reduced factor 2.77 −10.68 −29.55 dB. enhanced MAP due introduced multiple events scattering mechanism as well electronic polarization, interface polarization relaxation. growth provides reference design preparation bifunctional good HTS MAP.